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| CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. The diode is case compatible to the BPW78 phototransistor, allowing the user to assemble his own optical interrupters. Features D Side view case with spherical lens D Radiation direction perpendicular to mounting direction 94 8743 D D D D Angle of half intensity = 25 Peak wavelength lp = 950 nm High reliability Case compatible with BPW78 Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 100 2 170 100 -40...+100 -40...+100 260 450 Unit V mA A mW C C C C K/W tp x 100 ms t x5s Document Number 81000 Rev. 5, 16-Nov-99 www.vishay.de * FaxBack +1-408-970-5600 1 (5) CQX48 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise time Fall Time Test Conditions IF = 100 mA, tp 20 ms IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 50 mA, tp 20 ms IF = 50 mA x x Symbol VF V(BR) Cj TKfe Min 6 Typ 1.3 50 10 -0.8 25 950 50 400 450 Max 1.7 fe IF = 50 mA IF = 50 mA IF = 1 A, tp/T = 0.01, ms tp IF = 1 A, tp/T = 0.01, tp ms lp Dl tr tf x10 x10 Unit V V pF mW %/K deg nm nm ns ns Type Dedicated Characteristics Tamb = 25_C Parameter Radiant Intensity Test Conditions IF=50 mA, tp x20ms Type CQX 48 B Symbol Ie Min 2 Typ Max Unit mW/sr Typical Characteristics (Tamb = 25_C unless otherwise specified) 250 PV - Power Dissipation ( mW ) 200 IF - Forward Current ( mA ) 125 100 150 RthJA 100 75 RthJA 50 50 0 0 20 40 60 80 100 25 0 0 20 40 60 80 100 94 8029 e Tamb - Ambient Temperature ( C ) 94 7916 e Tamb - Ambient Temperature ( C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (5) Document Number 81000 Rev. 5, 16-Nov-99 CQX48 Vishay Telefunken 104 100.0 IF - Forward Current ( mA ) 103 102 101 100 10-1 0 94 7996 e Fe - Radiant Power ( mW ) 4 13718 10.0 1.0 0.1 1 2 3 1 10 100 1000 VF - Forward Voltage ( V ) IF - Forward Current ( mA ) Figure 3. Forward Current vs. Forward Voltage 1.2 V Frel - Relative Forward Voltage 1.1 I e rel ; Fe rel IF = 10 mA 1.0 0.9 Figure 6. Radiant Power vs. Forward Current 1.6 1.2 IF = 20 mA 0.8 0.4 0.8 0.7 0 20 40 60 80 100 94 7993 e 0 -10 0 10 50 100 140 94 7990 e Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 4. Relative Forward Voltage vs. Ambient Temperature 100.0 I e - Radiant Intensity ( mW/sr ) Figure 7. Rel. Radiant Intensity\Power vs. Ambient Temperature 1.25 Fe rel - Relative Radiant Power 1.0 10.0 0.75 0.5 1.0 0.25 IF = 100 mA 0 900 0.1 1 13717 10 100 1000 10000 94 7994 e IF - Forward Current ( mA ) l - Wavelength ( nm ) 950 1000 Figure 5. Radiant Intensity vs. Forward Current Figure 8. Relative Radiant Power vs. Wavelength Document Number 81000 Rev. 5, 16-Nov-99 www.vishay.de * FaxBack +1-408-970-5600 3 (5) CQX48 Vishay Telefunken 0 I e rel - Relative Radiant Intensity 10 20 30 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 94 7915 e Figure 9. Relative Radiant Intensity vs. Angular Displacement Dimensions in mm 96 12194 www.vishay.de * FaxBack +1-408-970-5600 4 (5) Document Number 81000 Rev. 5, 16-Nov-99 CQX48 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81000 Rev. 5, 16-Nov-99 www.vishay.de * FaxBack +1-408-970-5600 5 (5) |
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